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次世代型パワー半導体:市場、材料、技術

NEXT-GENERATION POWER SEMICONDUCTORS: MARKETS MATERIALS, TECHNOLOGIES

 

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The Information Network
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2017年5月US$2,495
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この調査レポートは、世界のパワー半導体市場を調査し、応用市場や市場分析、関連企業情報などを掲載しています。

主な掲載内容(目次より抜粋)

  1. 概説
  2. パワー半導体の用途
    1. 再生可能エネルギーにおけるパワー半導体
    2. ハイブリッド&電気自動車におけるパワー半導体
    3. LED照明におけるパワー半導体
    4. モータードライブにおけるパワー半導体
    5. スマートホーム市場におけるパワー半導体
    6. エンド用途向けGaNとSiC市場予測
  3. 市場分析
    1. 半導体市場におけるパワー半導体の位置付け
    2. IGBTとパワーMOSFETの成長見込み
    3. エンド用途市場
    4. ワイドギャップ半導体(ワイドバンドギャップセミコンダクター)市場
  4. 次世代型パワー半導体
    1. シリコンの限界克服への期待
    2. 次世代型サブストレートとしてのSiCとGaNへの期待
    3. ワイドギャップ半導体のメリット
    4. SiCとGaN比較
    5. SiCデバイス製造
    6. GaNデバイス製造
    7. 実装
  5. 企業情報
    1. パワー半導体企業
    2. SiCウエハー関連企業
    3. GaNウエハー関連企業
    4. 次世代の取り組みを行っている企業の概要

The rapid growth of the power semiconductor market in recent years has been driven by the proliferation of computer and consumer electronics, such as desktop computers, notebooks, netbooks, smartphones, flat panel displays and portable media players that require sophisticated power management to improve power efficiency and extend battery life. The rapid growth of the power semiconductor market in recent years has been driven by the proliferation of computer and consumer electronics, such as desktop computers, notebooks, netbooks, smartphones, flat panel displays and portable media players that require sophisticated power management to improve power efficiency and extend battery life. The worldwide markets are analyzed and projected.

The commercial battle for next-generation power semiconductors is evolving. IGBTs, SiC and other technologies are geared for the niche-oriented markets at 1,700 volts and higher. But what is the best technology for the larger 600- and 1,200-volt markets? both super-junction MOSFETs and IGBTs are ramping up on 300mm wafers, making them less expensive than GaN and SiC. In comparison, SiC MOSFETs are ramping up on 100mm wafers, while GaN-on-silicon is running on 150mm substrates.

This report analyzes and forecasts the traditional power semiconductor market as well as next generation devices.  Market shares of vendors by type are presented.



目次

Table Of Contents

Chapter 1    Introduction    1-1

1.1    Manufacturing Processes Are Differentiation Factors     1-3
1.2    Vertical Structure Devices Differ From Usual MOS Planar Structure     1-8
1.3    Super Junction Processes    1-12

Chapter 2    Applications of Power Semiconductors    2-1

2.1    Power Semiconductors in Renewable Energy    2-3

2.1.1    Solar    2-3
2.1.2    Wind    2-12

2.2    Power Semiconductors in Hybrid & Electric Vehicles    2-18

2.2.1    Automotive Megatrends    2-18
2.2.2    Wide Bandgap Devices for HEVs/EVs    2-30

2.3    Power Semiconductors in LED Lighting    2-39
2.4    Power Semiconductors in Industrial Motor Drives    2-53
2.5    Power Semiconductors in Smart Home Market    2-60
2.6    GaN and SiC Market Forecast For End Applications    2-66

Chapter 3    Market Analysis    3-1

3.1    Position of Power Semiconductors in Semiconductor Market     3-9
3.2    Growth Potential of IGBTs and Power MOSFETs     3-11
3.3    End Application Markets     3-23
3.4    Wide Bandgap Power Semiconductor Market    3-29

Chapter 4    Next-Generation Power Semiconductors     4-1

4.1    Expectations for Overcoming Silicon's Limitations     4-1
4.2    Expectations Of SiC and GaN as Next-Generation Substrates    4-3
4.3    Benefits of Wide Band Gap Semiconductors     4-3

4.4    SiC versus GaN     4-5

4.4.1    Material Properties    4-6
4.4.2    Material Quality    4-8
4.4.3    SiC Lateral Devices:    4-10
4.4.4    SiC Vertical Devices    4-10
4.4.5    GaN Lateral Devices    4-12

4.5    Fabrication of SiC devices    4-22

4.5.1     Bulk and Epitaxial Growth of SiC    4-22
4.5.1.1      Bulk Growth    4-22
4.5.1.2      Epitaxial Growth    4-23
4.5.1.3      Defects    4-23
4.5.2     Surface Preparation    4-25
4.5.3     Etching    4-27
4.5.4     Lithography    4-28
4.5.5     Ion Implantation    4-28
4.5.6     Surface Passivation    4-29
4.5.7     Metallization    4-32

4.6    Fabrication of GaN devices    4-33

4.6.1    GaN Challenges    4-37
4.6.1.1      Costs    4-37
4.6.1.2      Reliability    4-40
4.6.1.3      Component Packaging and Thermal Reliability    4-41
4.6.1.4      Control    4-41
4.6.1.5      Device Modeling    4-42

4.7    Packaging     4-42

Chapter 5    Company Profiles    5-1

5.1    Power Semiconductor Companies    5-1

5.1.1    Infineon     5-1
5.1.2    Mitsubishi     5-3
5.1.3    Toshiba     5-5
5.1.4    STMicroelectronics     5-7
5.1.5    Vishay     5-8
5.1.6    International Rectifier     5-11
5.1.7    Fairchild     5-13
5.1.8    Fuji Electric     5-16
5.1.9    Renesas     5-17
5.1.10    Semikron     5-19
5.1.11    NXP Semiconductors    5-20

5.2    SiC Wafer-Related Companies    5-22
5.3    GaN Wafer-Related Companies    5-22

5.4    Profiles of Companies with Next-Generation Activities    5-23

5.4.1    Mitsubishi Electric    5-23
5.4.2    Fuji Electric Holdings    5-24
5.4.3    Toshiba    5-25
5.4.4    Rohm    5-26
5.4.5    Sanken Electric    5-28
5.4.6    Shindengen Electric    5-29
5.4.7    Infineon    5-31
5.4.8    Microsemi    5-32
5.4.9    Cree    5-33
5.4.10    GeneSiC Semiconductor     5-34
5.4.11    Semisouth Laboratories    5-35
5.4.12    United Silicon Carbide      5-36
5.4.13    MicroGaN    5-37
5.4.14    Powerex    5-38
5.4.15    Fairchild    5-38
5.4.16    International Rectifier    5-39
5.4.17    Nitronix    5-39

List of Figures

1.1    Evolution Of IGBT Chip Structure    1-4
1.2    Effects Of Miniaturization Of IGBT Chip    1-6
1.3    SiC Trench-Type MOSFET And Resistance Reduction As Compared With DMOSFET    1-7
1.4    Planar And Vertical (Trench) MOSFET    1-9
1.5    Schematic Of A FinFET    1-11
1.6    Schematic Of A MOSFET And Super Junction MOSFET    1-13
1.7    Process Flow For Super Junction MOSFET    1-14
2.1    Forecast Of Solar Power    2-4
2.2    Full Bridge IGBT Topology    2-5
2.3    PV Inverter Market Distribution    2-8
2.4    Block Diagram Of Microcontroller-Based Inverter    2-11
2.5    Worldwide Wind Turbine Shipments    2-14
2.6    Top Wind Power Capacity by Country    2-15
2.7    Bill Of Materials For A Typical 30-50kw Inverter    2-20
2.8    A Simple Diagram Of A HEV Traction Drive System.    2-22
2.9    A More Complex Diagram Of PEEM In A Plug-In Hybrid Electric Vehicle (PHEV)    2-23
2.10    Conducting And Switching Loses For Inverter    2-25
2.11    Unit Pricing Trends In Power Semiconductors    2-27
2.12    HEV/EV Shipment Forecast    2-31
2.13    System And Component Costs For Wide Bandgap Semiconductors    2-32
2.14    Vertical And Lateral HEMY    2-34
2.15    GaN Lateral And GaN Vertical HEMTs In EVs    2-38
2.16    Market Drivers For LED Biz And Applications    2-41
2.17    SSL Vs. Classical Technologies    2-42
2.18    LED Performance Vs. Traditional Light Sources    2-43
2.19    Energy Production And Use Comparison    2-46
2.20    Typical LED Drive Circuit    2-49
2.21    Integration Of LED And LED Driver Using TSV    2-52
2.212    Simple Power MOSFET Motor Controller    2-57
2.23    Basic Operating Principle Of Inverter    2-63
2.24    System Block Diagram Of An Air Conditioner    2-65
3.1    Mitsubishi’s IGBT (Insulated Gate Bipolar Transistor) Generations    3-3
3.2    Infineon’s MOSFET Generations    3-4
3.3    Intel’s FinFET Design    3-5
3.4    Fuji’s MOSFET versus Super Junction MOSFET    3-6
3.5    NEC's GaN-on-Si Power Transistor     3-7
3.6    Fujitsu’s GaN-on-SiC HEMT Transistor    3-8
3.7    Power Semiconductor Market Forecast    3-10
3.8    Power Semiconductor Market Shares    3-12
3.9    IGBT Module Market Shares    3-13
3-10    IGBT Discrete Market Shares    3-14
3.11    MOSFET Market Shares    3-15
3.12    Market Shares For Super Junction MOSFET    3-21
3.13    SJ MOSFETs as an Interim Solution    3-22
3.14    Power Transistor Market Share By Application    3-24
3.15    Power Discrete Market For Renewable Energy    3-25
3.16    Power Discrete Market Hybrid For and Electric Vehicles    3-26
3.17    Power Discrete Market For General LED Lighting    3-27
3.18    Power Discrete Market For Industrial Motor Control    3-28
3.19    Forecast of Widebandgap Semiconductor Market    3-30
4.1    Silicon-Based Devices Reaching Maturity    4-2
4.2    Enhancement Mode GaN On Si Transistor    4-14
4.3    AlGaN/GaN HEMT, GaN MOSFET, MOS-HEMT    4-18
4.4    GaN HEMT Material Structure On Si Substrate    4-34
4.5    Power Package Integration Roadmap    4-43

List of Tables

2.1    Product Families And The Principal End Uses Of Power Products    2-2
2.2    Advantages And Disadvantages Of GaN Lateral HEMTs     2-36
2.3    Light Source Comparison    2-46
2.4    Forecast Of GaN And SiC Power Devices By End Applications    2-73
3.1    Market Shares For Japanese Companies     3-18
4.1    Physical Properties Of Select Semiconductor Materials    4-4
4.2    Wide Bandgap Material Properties    4-7
4.3    Lattice Constant And CTE Of Semiconductor Starting Material    4-11
4.4    GaN FET Vs Si MOSFET Characteristics    4-16
4.5    Standard Chemical Solution For Surface Preparation Of SiC Substrates    4-26
4.6    Interface Trap Densities For 4H-SiC Under Different Process Conditions.    4-31
 

 

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