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RFパワー半導体:シリコン、ガリウムナイトライド、ガリウムヒ素、シリコンカーバイド高出力RFデバイスRF Power Semiconductors
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Myriad products and services utilize RF power amplifiers in their transmitter circuitry: wireless infrastructure for cell phones and other mobile devices; radio and television broadcasting; medical equipment such as MRI machines; materials curing that includes carpet fibers and plywood; radar; space and satellite communications; police and fire radios; and military communications and electronics of all kinds. Most of these transmitters use semiconductors in the RF power amplifier output stages. Even modern, extremely high-power broadcast transmitters that traditionally have used large vacuum tubes in their RF sections have finally begun to use solid-state devices. This study examines RF power semiconductor devices that have power outputs of greater than four watts and operate at frequencies of up to 3.8 GHz, which represent the bulk of applications in use today. What Questions Does This Report Answer?
Who Needs This Report?
目次
Section 1. EXECUTIVE SUMMARY
1.1. RF Power - The Driver for Wireless Communications
1.2. A Perspective - History Repeats Itself
1.3. Technology Drivers
1.4. Si
1.5. SiC
1.6. GaAs
1.7. GaN
1.8. RF Power Semiconductor Device Packaging
1.9. The RF Power Semiconductor Markets and Forecasts
1.10. Market Segments
1.11. Forecast Implications
Section 2. RF POWER SEMICONDUCTOR DEVICE TECHNOLOGY IMPLICATIONS
2.1. Introduction to RF Power Semiconductor Devices
2.2. Device Technologies
2.3. Silicon Bipolar and Silicon FETs
2.4. SiC Devices
2.5. GaAs Devices
2.6. GaN Devices
2.7. RF Power Device Packaging
2.8. BeO and AIN Packaging
2.9. Plastic Packaging
2.10. Modern Compound Metal Packaging
Section 3. THE RF POWER SEMICONDUCTOR MARKETPLACE
3.1. Market Overview
3.2. Forecast Methodology
3.3. Changes from the Last Edition of This Report
3.4. Wireless Infrastructure
3.5. Military
3.6. Industrial/Scientific/Medical (ISM)
3.7. Broadcast
3.8. Commercial Avionics and Air Traffic Control
3.9. Non-Cellular Communications
3.10. RF Power Semiconductor Forecast Summary
3.11. Forecast Summary for All Segments
3.12. Forecast Summary without Wireless Infrastructure
3.13. RF Power Semiconductor Device Market Share Evaluations
3.14. RF Power Semiconductor Device Market Share by Vendor
3.15. RF Power Semiconductor Device Market Share by Segment
3.16. RF Power Semiconductor Device Market Share by Technology
3.17. Market Prognosis
Section 4. COMPANY PROFILES
4.1. Andrew (Commscope Corporation)
4.2. Andrew (Commscope Corporation) Profile
4.3. Andrew (Commscope Corpration) Analysis
4.4. Beam Power Technology
4.5. Beam Power Technology Profile
4.6. Beam Power technology Analysis
4.7. Cree Semiconductor
4.8. Cree Semiconductor Profile
4.9. Cree Semiconductor Analysis
4.10. Ericsson
4.11. Ericsson Profile
4.12. Ericsson Analysis
4.13. Freescale Semiconductor
4.14. Freescale Semiconductor Profile
4.15. Freescale Semiconductor Analysis
4.16. Harris Corporation
4.17. Harris Corporation Profile
4.18. Harris Corporation Analysis
4.19. Infineon Technologies
4.20. Infineon Technologies Profile
4.21. Infineon Technologies Analysis
4.22. Integra Technologies
4.23. Integra Technologies Profile
4.24. Integra Technologies Analysis
4.25. M/A-Com Technology Solutions
4.26. M/A-Com Technology Solutions Profile
4.27. M/A-Com Technology Solutions Analysis
4.28. Microsemi Corporation
4.29. Microsemi Corporation Profile
4.30. Microsemi Corporation Analysis
4.31. Mitsubishi Electric
4.32. Mitsubishi Electric Profile
4.33. Mitsubishi Electric Analysis
4.34. Nitronex Corporation
4.35. Nitronex Corporation Profile
4.36. Nitronex Corporation Analysis
4.37. Nujira Ltd.
4.38. Nujira Ltd. Profile
4.39. Nujira Ltd. Analysis
4.40. NXP Semiconductors
4.41. NXP Semiconductors Profile
4.42. NXP Semiconductors Analysis
4.43. Powerwave Technologies
4.44. Powerwave Technologies Profile
4.45. Powerwave Technologies Analysis
4.46. RFMD
4.47. RFMD Profile
4.48. RFMD Analysis
4.49. Rockwell Collins
4.50. Rockwell Collins Profile
4.51. Rockwell Collins Analysis
4.52. STMicroelectronics
4.53. STMicroelectronics Profile
4.54. STMicroelectronics Analysis
4.55. Sumitomo Electric Device Innovations
4.56. Sumitomo Electric Device Innovations Profile
4.57. Sumitomo Electric Device Innovations Analysis
4.58. Toshiba
4.59. Toshiba Profile
4.60. Toshiba Analysis
4.61. TriQuint Semiconductor
4.62. TriQuint Semiconductor Profile
4.63. TriQuint Semiconductor Analysis
4.64. TT Electronics Semelab Limited
4.65. TT Electronics Semelab Limited Profile
4.66. TT Electronics Semelab Limited Analysis
Section 5. COMPANY DIRECTORY Section 6. ACRONYMS Section 7. LINKS TO RELATED RESEARCH
7.1. Scope of Study
7.2. Sources and Methodology
7.3. Notes
17 Tables
* 表の部分売りが可能です。データリソースまでお問合せください。
1
Total RF Power Device Revenue by Market Segment, World Market: 2012 to 2017
2
Total RF Power Device Revenue, World Market: 2012 to 2017
3
RF Power Device Marketshare by Vendor, World Market: 2012
4
RF Power Device Revenue by Market Segment, Wireless Infrastructure, World Market: 2012 to 2017
5
RF Power Device Revenue by Market Segment, Military, World Market: 2012 to 2017
6
RF Power Device Revenue by Market Segment, Industrial/Medical/Scientific, World Market: 2012 to 2017
7
RF Power Device Revenue by Market Segment, Broadcast, World Market: 2012 to 2017
8
RF Power Device Revenue by Market Segment, Commercial Avionics & Air Traffic Control, World Market: 2012 to 2017
9
RF Power Device Revenue by Market Segment, Non-Cellular Communications, World Market: 2012 to 2017
10
RF Power Device Marketshare by Technology, World Market: 2017
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20 Charts
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携帯電話などの無線デバイス、ラジオやテレビの放送、MRI機器などの医療用機械、レーダー、宇宙/衛星通信、警察/消防無線、軍用通信、すべてのエレクトロニクスなど、送信機回路のRFパワーアンプを利用する無数のサービスがある。これらの送信機の多くは、RFパワーアンプの出力段階で半導体を使用している。非常に高出力の放送用送信機は従来、RF部分で大きな真空管を使用してきたが、ついにソリッドステートデバイスを使用しはじめるようになった。 この調査レポートは、出力5ワット、周波数3.8GHz以上のRFパワー半導体デバイスを調査しており、現在使用されているほとんどのアプリケーションを網羅している。