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【分析レポート:技術】RFパワー半導体:シリコン、窒化ガリウム、ガリウム砒素の高出力RFデバイス

RF Power Semiconductors: Silicon, Gallium Nitride, and Gallium Arsenide High-Power RF Devices

Technology Analysis Report

 

出版社 出版年月価格 ページ数図表数
ABI Research
ABIリサーチ
2018年4月お問い合わせください 22 2

サマリー

A myriad of products and services utilize RF power amplifiers in their transmitter circuitry: wireless infrastructure for cell phones and other mobile devices; radio and television broadcasting; medical equipment such as MRI machines; materials curing that includes carpet fibers and plywood; radar; space and satellite communications; police and fire radios; and military communications and electronics of all kinds. Most of these transmitters use semiconductors in the RF power amplifier output stages. Even modern, extremely high-power broadcast transmitters that traditionally have used large vacuum tubes in their RF sections have finally begun to use solid-state devices.
 
This study examines RF power semiconductor devices that have power outputs of greater than three watts and operate at frequencies of up to 4 GHz, which represent the bulk of applications in use today. Both silicon-based and gallium based devices are covered.
 
This application note is a companion narrative to the market data report MD-RFPS-18.
 

 

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目次

  • 1. EXECUTIVE SUMMARY
    • 1.1. RF Power Semiconductor Devices
    • 1.2. Technology Summary
    • 1.3. Business Segment Discussion
  • 2. RF POWER SEMICONDUCTOR DEVICE TECHNOLOGY IMPLICATIONS
    • 2.1. Introduction to RF Power Semiconductor Devices
    • 2.2. Device Technologies
    • 2.3. RF Power Device Packaging
  • 3. THE RF POWER DEVICE MARKETPLACE
    • 3.1. Wireless Infrastructure
    • 3.2. Military/Defense
    • 3.3. Instrumentation, Scientific, and Medical
    • 3.4. Broadcast
    • 3.5. Commercial Avionics and Air Traffic Control
    • 3.6. Non-Cellular Communications
    • 3.7. The Vendor Picture

Companies Mentioned

  • RF Technologies
  • Ampleon
  • Wireless Infrastructure Group
  • Qorvo, Inc.

 

 

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